Showing 217–228 of 356 results

INFINEON IRS4427PBF IGBT MOSFET, 50 ns, DIP-8

370.00
Description This is a IGBT / MOSFET, 50 ns, DIP-8 product from INFINEON with the model number IRS4427PBF Product details

Insulated Straight Butt Crimp Connector (Pack of 5)

63.00
Crimp easily without splitting to secure the connection in place Standard crimp and seal heat shrink butt connectors Guaranteed to

IRF1010 – N-Channel Power MOSFET

50.00
IRF1010 MOSFET – 60V 84A N-Channel HEXFET Power Mosfet – TO-220 Package IRF1010 Advanced HEXFET® Power MOSFETs utilize advanced processing

IRF244 MOSFET – 250V 15A N-Channel Power MOSFET TO-247 Package

118.00
Product Description Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device

IRF530 100V 17A N-Channel Power MOSFET

32.00
IRF530 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

IRF540

22.00
IRF540 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

IRF610 – 200 V 3.3 Amp N-Channel Power MOSFET

28.00
IRF610 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

IRF9530 MOSFET P-CHANNEL POWER MOSFET TO-220 PACKAGE – 100V 14A

25.00
IRF9530 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low

IRFP250N MOSFET – 200V 30A N-Channel Power MOSFET TO-247 Package

175.00
IRFP250N is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low

IRFP260N

105.00
IRFP260N is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low

IRFZ44N MOSFET – 55V 49A N-Channel Power MOSFET TO-220 Package

125.00
IRFZ44N is specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low

IRG4PC40UD 600V 8-60 kHz IGBT

255.00
The IRG4BC40UD is an Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. Its is designed to be a “drop-in”