The CNY64, CNY65, and CNY66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic package. The single components are mounted opposite one another, providing a distance between input and output for highest safety requirements of > 3 mm.
Features/Specs:
• Rated recurring peak voltage (repetitive)
VIORM = 1450 Vpeak
• Thickness through insulation 3 mm
• Creepage current resistance according to
VDE 0303/IEC 60112 comparative tracking
index: CTI 200
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
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