IRFZ44N is specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features:-
- Â Dynamic dV/dt rating
- Â Repetitive avalanche rated
- Â Fast switching
- Ease of paralleling
- Simple drive requirements
- Number of Channels: 1
- Transistor Polarity: N -Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id):49A
- Operating Temperature Range: -55 – 150°C
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