This IGBT utilizes the advanced powerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior.
Features/Specs:
- Low on-Voltage Drop (VCE Sat)
- Low Cres/Cies ratio (No cross conduction susceptibility)
- Short Circuit withstand Time: 10us
- Collector-to-Emitter Voltage: 600V
- Continuous Collector Current @ Tc=25 deg C : 35A
- Operating Junction and Storage Temperature Range: – 55 deg C to +150 deg C
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