Showing 613–624 of 1088 results

Inductor 10mH(10 pic pack)

32.00
10mH 1/2W 0410 Color Ring Axial Lead Type Inductor is a small lightweight inductor. Its compact design is ideal to use

INFINEON CDM10VXTSA1 DIMMING CONTROLLER IC, 0-10V, SOT-23-6

60.00
Product Information Device Topology: – Input Voltage Min: 11V Input Voltage Max: 25V Output Voltage Max: – Output Current Max: 3.63A Switching Frequency: 1kHz No. of

INFINEON IRS4427PBF IGBT MOSFET, 50 ns, DIP-8

370.00
Description This is a IGBT / MOSFET, 50 ns, DIP-8 product from INFINEON with the model number IRS4427PBF Product details

Insulated Straight Butt Crimp Connector (Pack of 5)

63.00
Crimp easily without splitting to secure the connection in place Standard crimp and seal heat shrink butt connectors Guaranteed to

INVENTO 2Pcs 4000 IC CD4000 HCF4000BE Logic Gate IC DUAL 3-INPUT NOR GATE PLUS INVERTER Automotive Electronic Hobby Kit

250.00
Specifications General brand INVENTO Model Number 2Pcs 4000 IC CD4000 HCF4000BE Logic Gate IC DUAL 3-INPUT NOR GATE PLUS INVERTER

INVENTO 4Pcs SN74HC20D 74HCT20N 7420 IC Logic Gate NAND Gate, 74HC20, 4 Input, 5.2 mA, 2 V to 6 V Automotive Electronic Hobby Kit

235.00
The SN74HC20D is a dual 4-input positive-NAND Gate contains two independent circuits. This device performs the Boolean function Y =

IR2104 IC – Half Bridge Driver IC Dip – 8 Package

120.00
The IR2104 is high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output

IR2113 IC – High and Low Side Driver IC

186.00
The IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output

IRF1010 – N-Channel Power MOSFET

50.00
IRF1010 MOSFET – 60V 84A N-Channel HEXFET Power Mosfet – TO-220 Package IRF1010 Advanced HEXFET® Power MOSFETs utilize advanced processing

IRF244 MOSFET – 250V 15A N-Channel Power MOSFET TO-247 Package

118.00
Product Description Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device

IRF530 100V 17A N-Channel Power MOSFET

32.00
IRF530 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

IRF540

22.00
IRF540 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance