IRF1010 – N-Channel Power MOSFET

IRF1010 MOSFET – 60V 84A N-Channel HEXFET Power Mosfet – TO-220 Package

IRF1010 Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Features:

• Advanced process technology
• Ultra low on-resistance
• Dynamic dv/dt rating
• Fast switching
• Fully avalanche rated

Features/Specs:

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage: 60V
• Continuous Drain Current: 84A
• Drain-Source Resistance: 12mOhms
• Gate-Source Voltage: 20V
• Gate Charge: 130 nC
• Operating Temperature Range: -55 ~ 150°C
• Power Dissipation: 200W
• Mounting Style: Through Hole
• Package: TO-220