IRFP250N is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Features:-
- Â Dynamic dV/dt rating
- Â Repetitive avalanche rated
- Â Fast switching
- Ease of paralleling
- Simple drive requirements
- Number of Channels: 1
- Transistor Polarity: N -Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id):30A
- Operating Temperature Range: -55 – 150°C
Reviews
There are no reviews yet.